High-purity GaAs and Cr-doped GaAs epitaxial layers by MBE
Liquid-nitrogen-temperature Hall mobilities of about 105 000 cm/sup 2//V sec have been achieved in n-type epitaxial layers grown by molecular beam epitaxy (MBE). The Hall mobility of the p-type epitaxial layers at 78 /sup 0/K was about 8440 cm/sup 2//V sec. The net donor concentration and the net acceptor concentrations for n-type and p-type epitaxial layers were about 4 x 10/sup 14/ and 1 x 10/sup 14/ cm/sup -3/, respectively. The compensation ratio in the n-type epitaxial layers was about 0.4 as determined from the 78 /sup 0/K electron mobility. Cr-doped GaAs buffer layers for FET's were grown in a substrate temperature range of 500--640 /sup 0/C. Sheet resistances in excess of 10/sup 9/ ..cap omega../ D'Alembertian were achieved when the substrate temperature during the growth was about 580 /sup 0/C or higher. The amount of Cr that can be incorporated into the epitaxial layer showed a strong substrate temperature dependence.
- Research Organization:
- University of Illinois, Department of Electrical Engineering, Coordinated Science Laboratory, Urbana, Illinois 61801
- OSTI ID:
- 5906273
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 50:10; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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ARSENIC COMPOUNDS
ARSENIDES
CHROMIUM
CRYOGENIC FLUIDS
CRYSTAL GROWTH
DOPED MATERIALS
ELECTRON MOBILITY
ELEMENTS
EPITAXY
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
LAYERS
LIQUIDS
LOW TEMPERATURE
METALS
MOBILITY
N-TYPE CONDUCTORS
NITROGEN
NONMETALS
P-TYPE CONDUCTORS
PARTICLE MOBILITY
PNICTIDES
QUANTITY RATIO
SEMICONDUCTOR MATERIALS
TRANSITION ELEMENTS