Electrical properties of n-type epitaxial indium phosphide films

Journal Article · Thu Jun 01 04:00:00 EDT 1978 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.325243· OSTI ID:6814595

Tsai, M; Bube, R H

Electrical transport properties have been analyzed by Hall-effect measurements for a series of epitaxial n-type undoped InP films deposited on high-resistivity GaAs : Cr or InP : Fe substrates by metalorganic chemical vapor deposition. For electron densities less than 10/sup 1/6 cm/sup -/3, films deposited on GaAs : Cr substrates show a general increase in electron mobility with increase in electron density as small structural potential barriers play a significant role in determining the mobility. All films deposited on InP : Fe substrates had an electron density greater than 10/sup 1/6 cm/sup -/3 and exhibited behavior virtually identical to that of bulk single crystals of InP. Electron mobilities at 77 /sup 0/K as high as 10 500 cm/sup 2//V sec on GaAs : Cr substrates and 16 500 cm/sup 2//V sec on InP : Fe substrates have been measured.

• Research Organization: Department of Materials Science and Engineering, Stanford University, Stanford, California 94305
• OSTI ID: 6814595
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 49:6; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELECTRON DENSITY
ELECTRON MOBILITY
EPITAXY
FILMS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MOBILITY
PARTICLE MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
SUBSTRATES
SURFACE COATING