Molecular beam epitaxial growth of high-quality InSb on InP and GaAs substrates

Technical Report · Sun Jan 01 04:00:00 EST 1989

OSTI ID:5422301

Oh, J E; Bhattacharya, P K; Chen, Y C; Tsukamoto, S

Epitaxial layers of InSb were grown on InP and GaAs substrates by molecular beam epitaxy. The dependence of the epilayer quality on flux ratio, J sub Sb4/J sub In, was studied. Deviation from an optimum value of J sub Sb4/J sub In (approx. 2) during growth led to deterioration in the surface morphology and the electrical and crystalline qualities of the films. Room temperature electron mobilities as high as 70,000 and 53,000 sq cm /V-s were measured in InSb layers grown on InP and GaAs substrates, respectively. Unlike the previous results, the conductivity in these films is n-type even at T = 13 K, and no degradation of the electron mobility due to the high density of dislocations was observed. The measured electron mobilities (and carrier concentrations) at 77 K in InSb layers grown on InP and GaAs substrates are 110,000 sq cm/V-s (3 x 10(15) cm(-3)) and 55,000 sq cm/V-s (4.95 x 10(15) cm(-3)), respectively, suggesting their application to electronic devices at cryogenic temperatures.

• Research Organization: Michigan Univ., Ann Arbor, MI (USA)
• OSTI ID: 5422301
• Report Number(s): N-89-26739; NASA-CR--185440; NAS--1.26:185440
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONTROL
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HALL EFFECT
INDIUM ANTIMONIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LOW TEMPERATURE
MOBILITY
MOLECULAR BEAM EPITAXY
PARTICLE MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
QUALITY CONTROL
SUBSTRATES