The Role of Anti-Phase Domains in InSb-Based Structures Grown on On-Axis and Off-Axis Ge Substrates

Journal Article · Mon Dec 26 04:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3671719· OSTI ID:22004013

Debnath, M C; Mishima, T D; Santos, M B ^[1]; Hossain, K; Holland, O W ^[2]

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1. Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, OK 73019 (United States)
2. Amethyst Research, Inc., 1405 4th Ave NW, Ardmore, OK 73401 (United States)

Anti-phase domains form in InSb epilayers and InSb/Al{sub 0.20}In{sub 0.80}Sb single quantum wells when grown upon on-axis (001) Ge substrates by molecular beam epitaxy. Domain formation is partially suppressed through growth on Ge substrates with surfaces that are several degrees off the (001) or (211) axis. By using off-axis Ge substrates, room-temperature electron mobilities increased to {approx}60,000 cm{sup 2}/V-s and {approx}14,000 cm{sup 2}/V-s for a 4.0-{mu}m-thick InSb epilayer and a 25-nm InSb quantum well, respectively.

• OSTI ID: 22004013
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1416; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM COMPOUNDS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
ELECTRON MOBILITY
GERMANIUM
HALL EFFECT
INDIUM ANTIMONIDES
INTERFACES
LOGIC CIRCUITS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K