Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates

Technical Report · Sat Dec 31 23:00:00 EST 1988

OSTI ID:5524439

Oh, J E; Chen, Y C; Bhattacharya, P K; Tsukamoto, S

Surface morphologies and electrical properties of molecular beam epitaxial InSb and InAs(x)Sb(1-x) grown on GaAs and InP substrates are discussed. The crystals are all n-type at 300 K and lower temperatures. The surface morphology and electrical characteristics are strongly dependent on Sb(4)/In flux ratio and substrate temperature. The highest mobilities in InSb on InP are 70,000 at 300 K and 110,000 cm(2)/V.s (n=3x10(15) cm(-3)) at 77 K. The mobilities in the alloys also increase monotonically with lowering of temperature. Good quality InAs(x)Sb(1-x) was grown directly on InP substrates by molecular beam epitaxy.

• Research Organization: Michigan Univ., Ann Arbor, MI (USA)
• OSTI ID: 5524439
• Report Number(s): N-89-26740; NASA-CR--185439; NAS--1.26:185439
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
ANTIMONIDES
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CARRIER MOBILITY
ELECTRON MOBILITY
EPITAXY
FLUX DENSITY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
MOBILITY
MOLECULAR BEAM EPITAXY
MORPHOLOGY
PARTICLE MOBILITY
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SUBSTRATES
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE