In situ study of the formation kinetics of InSb quantum dots grown in an InAs(Sb) matrix

Journal Article · Tue Jan 15 04:00:00 EST 2008 · Semiconductors

DOI:https://doi.org/10.1134/S1063782608010107· OSTI ID:22004941

Lyublinskaya, O G; Solov'ev, V A; Mel'tser, B Ya; Ivanov, S V ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

Formation of InSb quantum dots grown in an InAs matrix by molecular-beam epitaxy that does not involve forced deposition of InSb is studied. Detection of intensity oscillations in the reflection of high-energy electron diffraction patterns was used to study in situ the kinetics of the formation of InSb quantum dots and an InAsSb wetting layer. The effects of the substrate temperature, the shutter operation sequence, and the introduction of growth interruptions on the properties of the array of InSb quantum dots are examined. Introduction of a growth interruption immediately after completing the exposure of the InAs surface to the antimony flux leads to a reduction in the nominal thickness of InSb and to an enhancement in the uniformity of the quantum-dot array. It is shown that, in the case of deposition of submonolayer-thickness InSb/InAs quantum dots, the segregation layer of InAsSb plays the role of the wetting layer. The Sb segregation length and segregation ratio, as well as their temperature dependences, are determined.

• OSTI ID: 22004941
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 42; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
DEPOSITION
DETECTION
ELECTRON DIFFRACTION
INDIUM ANTIMONIDES
INDIUM ARSENIDES
KINETICS
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM DOTS
REFLECTION
SEGREGATION
SUBSTRATES
SURFACES
TEMPERATURE DEPENDENCE
THICKNESS