Room-temperature 3.9-4.3 {mu}m photoluminescence from InSb submonolayers grown by molecular beam epitaxy in an InAs matrix

Journal Article · Mon Jan 03 04:00:00 EST 2005 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1844042· OSTI ID:20636796

Solov'ev, V A; Lyublinskaya, O G; Semenov, A N; Meltser, B Ya; Solnyshkov, D D; Terent'ev, Ya V; Prokopova, L A; Toropov, A A; Ivanov, S V; Kop'ev, P S ^[1]

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1. Ioffe Physico-Technical Institute, 26 Polytekhnicheskaya Street, St. Petersburg 194021 (Russian Federation)

We report on molecular beam epitaxial growth of InSb submonolayer insertions in an InAs matrix, exhibiting intense mid-IR photoluminescence (PL) up to room temperature (RT). The InSb insertions are fabricated by an exposure of InAs surface to an antimony Sb{sub 4} flux. The nominal thickness of insertions grown at different temperatures (T{sub S}=400-485 deg. C) ranges from 0.6 to 1.4 monolayer, as estimated from x-ray diffraction measurements of InSb/InAs multiple submonolayer structures. This gives rise to the variation of the emission wavelength within the 3.9-4.3 {mu}m range at RT. An integral PL intensity drop from 77 K to RT does not exceed 20 times.

• OSTI ID: 20636796
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 86; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
CRYSTAL GROWTH
HETEROJUNCTIONS
INDIUM ANTIMONIDES
INDIUM ARSENIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
THICKNESS
X-RAY DIFFRACTION