Room temperature midinfrared electroluminescence from InSb/InAs quantum dot light emitting diodes

Journal Article · Mon Sep 01 04:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2976551· OSTI ID:21175548

Carrington, P J; Solov'ev, V A; Zhuang, Q; Krier, A ^[1]; Ivanov, S V ^[2]

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1. Department of Physics, Lancaster University, Lancaster LA1 4YB (United Kingdom)
2. Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021 (Russian Federation)

Self-assembled InSb submonolayer quantum dots (QDs) in an InAs matrix have been grown by molecular beam epitaxy using Sb{sub 2} and As{sub 2} fluxes. The structures exhibit bright midinfrared photoluminescence up to room temperature. Intense room temperature electroluminescence with a peak at wavelength near 3.8 {mu}m was observed from p-i-n light emitting diode structures containing ten InSb submonolayer QD sheets inserted within the InAs active region.

• OSTI ID: 21175548
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 93; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELECTROLUMINESCENCE
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INFRARED SPECTRA
LIGHT EMITTING DIODES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K