Optical absorption and emission of InP sub 1 minus x Sb sub x alloys
- Department of Electrical Engineering, University of Utah, Salt Lake City, UT (USA) Materials Science and Engineering, University of Utah, Salt Lake City, UT (USA)
A detailed optical study of the metastable III/V semiconductor alloy InP{sub 1{minus}{ital x}}Sb{sub {ital x}} is presented. InP{sub 1{minus}{ital x}}Sb{sub {ital x}} layers are grown throughout the entire compositional range by atmospheric pressure organometallic vapor phase epitaxy on InP, InAs, and InSb substrates. Composition and strain are measured by combined electron microprobe analysis and x-ray diffractometry. The dependence of band gap on composition is experimentally established for the first time from absorption spectra measured at 10 and 300 K. The resultant value of the band-gap bowing parameter is 1.52{plus minus}0.08 eV, independent of temperature. The absorption spectra show the InP{sub 1{minus}{ital x}}Sb{sub {ital x}} layers to have long band tails, which extend further into the gap as the Sb concentration is increased. The band tails are induced by compositional clustering. Photoluminescence (PL) spectra are measured between 10 and 300 K. The PL peaks are assigned to recombination between carriers occupying band-tail states or to recombination via deep centers in the gap.
- DOE Contract Number:
- FG02-84ER45061
- OSTI ID:
- 6083124
- Journal Information:
- Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 68:9; ISSN 0021-8979; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360603* -- Materials-- Properties
ABSORPTION SPECTRA
ANTIMONIDES
ANTIMONY COMPOUNDS
COHERENT SCATTERING
DIFFRACTION
ELECTRONIC STRUCTURE
ENERGY GAP
EPITAXY
INDIUM ANTIMONIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LOW TEMPERATURE
LUMINESCENCE
MEDIUM TEMPERATURE
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTOLUMINESCENCE
PHYSICAL PROPERTIES
PNICTIDES
RECOMBINATION
SCATTERING
SPECTRA
ULTRALOW TEMPERATURE
VAPOR PHASE EPITAXY
VERY LOW TEMPERATURE
X-RAY DIFFRACTION