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Optical absorption and emission of InP sub 1 minus x Sb sub x alloys

Journal Article · · Journal of Applied Physics; (USA)
DOI:https://doi.org/10.1063/1.346169· OSTI ID:6083124
; ; ;  [1]
  1. Department of Electrical Engineering, University of Utah, Salt Lake City, UT (USA) Materials Science and Engineering, University of Utah, Salt Lake City, UT (USA)

A detailed optical study of the metastable III/V semiconductor alloy InP{sub 1{minus}{ital x}}Sb{sub {ital x}} is presented. InP{sub 1{minus}{ital x}}Sb{sub {ital x}} layers are grown throughout the entire compositional range by atmospheric pressure organometallic vapor phase epitaxy on InP, InAs, and InSb substrates. Composition and strain are measured by combined electron microprobe analysis and x-ray diffractometry. The dependence of band gap on composition is experimentally established for the first time from absorption spectra measured at 10 and 300 K. The resultant value of the band-gap bowing parameter is 1.52{plus minus}0.08 eV, independent of temperature. The absorption spectra show the InP{sub 1{minus}{ital x}}Sb{sub {ital x}} layers to have long band tails, which extend further into the gap as the Sb concentration is increased. The band tails are induced by compositional clustering. Photoluminescence (PL) spectra are measured between 10 and 300 K. The PL peaks are assigned to recombination between carriers occupying band-tail states or to recombination via deep centers in the gap.

DOE Contract Number:
FG02-84ER45061
OSTI ID:
6083124
Journal Information:
Journal of Applied Physics; (USA), Journal Name: Journal of Applied Physics; (USA) Vol. 68:9; ISSN 0021-8979; ISSN JAPIA
Country of Publication:
United States
Language:
English