Very low current threshold GaAs/Al/sub 0. 5/Ga/sub 0. 5/As double-heterostructure lasers grown by chemical beam epitaxy

Journal Article · Sun Feb 23 23:00:00 EST 1986 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.96490· OSTI ID:6267920

Tsang, W T

The first device performance of GaAs/Al/sub x/Ga/sub 1-x/As double-heterostructure lasers grown by chemical beam epitaxy (CBE) is reported. Very low averaged current threshold densities of approx.500 A/cmS were obtained for wafers with active layer thicknesses of approx.500--1000 A and confinement layers of Al/sub 0.5/Ga/sub 0.5/As. Such current threshold densities were similar to those obtained from the best wafers grown by other techniques. This unequivocally established that CBE is capable of producing high optical quality multilayer heterostructures. Further, extreme device uniformity was also obtained.

• Research Organization: AT and T Bell Laboratories, Crawfords Corner Road, Holmdel, New Jersey 07733
• OSTI ID: 6267920
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 48:8; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
CURRENTS
DATA
DIMENSIONS
ELECTRIC CURRENTS
EPITAXY
EXPERIMENTAL DATA
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
LASERS
NUMERICAL DATA
PERFORMANCE
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
THICKNESS
THRESHOLD CURRENT
VAPOR PHASE EPITAXY