Radiation-tolerant high-voltage CMOS/MNOS technology
A radiation-tolerant metal-gate CMOS technology has been developed for use on non-volatile MNOS integrated circuit chips. These CMOS peripherals are capable of the high voltage operation (> 25 V) required to drive the memory array and require only the standard seven mask levels, including passivation. One additional mask is required to define the MNOS memory array. Fabrication and characterization of these circuits are described. Processing sequences compatible with known radiation-hardening procedures are defined.
- Research Organization:
- Sandia Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- EY-76-C-04-0789
- OSTI ID:
- 6266358
- Report Number(s):
- SAND-78-1523C; CONF-781210-4
- Country of Publication:
- United States
- Language:
- English
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High-speed nonvolatile CMOS/MNOS RAM
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Conference
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Sun Dec 31 23:00:00 EST 1978
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OSTI ID:6099599
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Journal Article
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Mon Oct 01 00:00:00 EDT 1984
· IEEE Trans. Nucl. Sci.; (United States)
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OSTI ID:6031631
Related Subjects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPUTERS
ELECTRONIC CIRCUITS
FABRICATION
HARDENING
INTEGRATED CIRCUITS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSISTORS
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
COMPUTERS
ELECTRONIC CIRCUITS
FABRICATION
HARDENING
INTEGRATED CIRCUITS
MEMORY DEVICES
MICROELECTRONIC CIRCUITS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSISTORS