High-speed nonvolatile CMOS/MNOS RAM

Conference · Sun Dec 31 23:00:00 EST 1978

OSTI ID:6099599

Derbenwick, G F; Dodson, W D; Sokel, R J

A bulk silicon technology for a high-speed static CMOS/MNOS RAM has been developed. Radiation-hardened, high voltage CMOS circuits have been fabricated for the memory array driving circuits and the enhancement-mode p-channel MNOS memory transistors have been fabricated using a native tunneling oxide with a 45 nm CVD Si/sub 3/N/sub 4/ insulator deposited at 750/sup 0/C. Read cycle times less than 350 ns and write cycle times of 1 ..mu..s are projected for the final 1Kx1 design. The CMOS circuits provide adequate speed for the write and read cycles and minimize the standby power dissipation. Retention times well in excess of 30 min are projected.

• Research Organization: Sandia Labs., Albuquerque, NM (USA)
• DOE Contract Number: EY-76-C-04-0789
• OSTI ID: 6099599
• Report Number(s): SAND-79-0603C; CONF-790809-1
• Country of Publication: United States
• Language: English

Related Subjects

440300* -- Miscellaneous Instruments-- (-1989)
47 OTHER INSTRUMENTATION
DESIGN
ELECTRONIC CIRCUITS
HARDENING
INTEGRATED CIRCUITS
MICROELECTRONIC CIRCUITS
MOS TRANSISTORS
PERFORMANCE
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
TRANSISTORS