1024-bit MNOS RAM with inverted CMOS
Conference
·
OSTI ID:5547781
Inverted CMOS control circuitry was used with MNOS memory transistors to build a high-speed nonvolatile 1024-bit RAM with low power and good radiation hardness. 4 figures, 2 tables.
- Research Organization:
- Sandia Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- EY-76-C-04-0789
- OSTI ID:
- 5547781
- Report Number(s):
- SAND-79-1875C; CONF-800209-1
- Country of Publication:
- United States
- Language:
- English
Similar Records
Radiation-hardened nonvolatile MNOS RAM
High-speed nonvolatile CMOS/MNOS RAM
Serial nonvolatile 1024 bit MNOS memory
Conference
·
Fri Dec 31 23:00:00 EST 1982
·
OSTI ID:5953052
High-speed nonvolatile CMOS/MNOS RAM
Conference
·
Sun Dec 31 23:00:00 EST 1978
·
OSTI ID:6099599
Serial nonvolatile 1024 bit MNOS memory
Conference
·
Mon Dec 31 23:00:00 EST 1979
·
OSTI ID:5114917
Related Subjects
42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
HARDENING
LOGIC CIRCUITS
MEMORY DEVICES
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
TRANSISTORS
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
440200 -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ELECTRONIC CIRCUITS
HARDENING
LOGIC CIRCUITS
MEMORY DEVICES
MOS TRANSISTORS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATION HARDENING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR STORAGE DEVICES
TRANSISTORS