Polarization characteristics of AlGaAs/GaAs double-heterostructure lasers grown on Si substrates

Journal Article · Mon Nov 05 04:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104018· OSTI ID:6253839

Liu, X; Lee, H P; Wang, S ^[1]

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1. Department of Electrical Engineering and Computer Sciences, Univ. of California, Berkeley, CA (USA) Electronics Research Laboratory, Univ. of California, Berkeley, CA (USA)

The polarization of laser radiations from AlGaAs/GaAs double-heterostructure lasers grown on planar, trenched, and SiN-patterned Si substrates are examined. It was found that TM modes lase first in most of these lasers. Competition between TE and TM modes also occurs in some devices. A qualitative explanation is given on the basis of stress-induced changes in the optical gains between TE and TM modes. The difference in the polarization behavior among these lasers indicates that the residual tensile stress is influenced by substrate patterning.

• OSTI ID: 6253839
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:19; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
AMPLIFICATION
ARSENIC COMPOUNDS
ARSENIDES
ELECTROMAGNETIC RADIATION
GAIN
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER RADIATION
LASERS
MODULATION
OPTICAL MODES
OSCILLATION MODES
PNICTIDES
POLARIZATION
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
STRESSES