AlGaAs/GaAs stripe laser diodes fabricated on Si substrates by MOCVD

Journal Article · Mon Jun 01 04:00:00 EDT 1987 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1987.1073468· OSTI ID:6154208

Sakai, S; Shiraishi, H; Umeno, M

The lasing characteristics of the 7 ..mu..m wide oxide stripe double heterostructure lasers grown on Si and on GaAs substrates are measured and compared. The averaged threshold current and differential efficiency on Si are about double and one-half, respectively, of those on GaAs, but those of the best device on Si are almost the same as the standard device on GaAs. The lasing wavelength is almost the same, but the spectrum spreading is larger for those on Si, and the diodes on Si substrates lase in TM or TM + TE modes, while those on GaAs lase only in TE.

• Research Organization: Microfabritech, Univ. of Florida, Gainesville, FL
• OSTI ID: 6154208
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. QE-23:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602 -- Other Materials-- Structure & Phase Studies
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
CURRENTS
DEPOSITION
EFFICIENCY
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
ELEMENTS
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LASER RADIATION
LASERS
LINEAR MOMENTUM
OXIDES
OXYGEN COMPOUNDS
PNICTIDES
QUANTUM EFFICIENCY
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR LASERS
SEMIMETALS
SILICON
SUBSTRATES
SURFACE COATING
THRESHOLD CURRENT
TRANSVERSE MOMENTUM
WAVELENGTHS