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Model of solar cell proton damage

Technical Report ·
OSTI ID:6249167
A short circuit current (I sub sc) degradation model for gallium arsenide (GaAs) solar cells irradiated by protons from low energy to 100 MeV was developed. This model was found to be satisfactory in predicting the I sub sc degradation of GaAs cells, but not that of silicon (Si) cells. A modification to the aforementioned model that preserves the optical wavelength dependency in the photogeneration of minority carrier pairs was described herein. Spectral Si and GaAs response and I sub sc for the Si and GaAs solar cells were discussed, and also were presented in graph form. The overall predictability of the modified model was deemed to be satisfactory.
Research Organization:
TRW Defense and Space Systems Group, Redondo Beach, CA (USA)
OSTI ID:
6249167
Report Number(s):
N-84-29316
Country of Publication:
United States
Language:
English

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Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BARYONS
DAMAGE
DIRECT ENERGY CONVERTERS
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
GALLIUM ARSENIDE SOLAR CELLS
HADRONS
MATHEMATICAL MODELS
NUCLEONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PROTONS
RADIATION EFFECTS
SOLAR CELLS
SOLAR EQUIPMENT