Piecewise simulation proton test of gallium arsenide and thin silicon solar cells

Technical Report · Sun Jan 01 04:00:00 EST 1984

OSTI ID:6284268

Peterson, D G; Billets, S A

Gallium Arsenide (GaAs) solar cells are viewed as a potential primary power source on certain future Earth orbiting satellites. However, the relative merits of gallium arsenide over silicon in a space radiation environment are largely unknown because a general degradation model for gallium arsenide does not exist. The results of a test simulating the proton radiation environment existing in a polar orbit and the concomitant effects on GaAs and thin silicon (Si) solar cells are presented. The objectives and methodology of the simulation test were discussed. The electrical characteristics of GaAs and Si solar cells are given in graph form. It was concluded that GaAs cells are viable for use on satellites in low Earth orbit.

• Research Organization: Lockheed Missiles and Space Co., Inc., Sunnyvale, CA (USA)
• OSTI ID: 6284268
• Report Number(s): N-84-29317
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
DAMAGE
DIRECT ENERGY CONVERTERS
ELECTRICAL PROPERTIES
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
RADIATION EFFECTS
SILICON SOLAR CELLS
SIMULATION
SOLAR CELLS
SOLAR EQUIPMENT
SPACE FLIGHT