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Title: Computer simulations of the proton irradiated (AlGa)As-GaAs solar cells

Journal Article · · J. Appl. Phys.; (United States)
DOI:https://doi.org/10.1063/1.339058· OSTI ID:6088397

An improved numerical model for computing the displacement defect density, the damage constants for the minority-carrier diffusion lengths and the degradations of the short-circuit current I/sub sc/, open-circuit voltage V/sub oc/, and the conversion efficiency eta/sub c/ in a proton irradiated (AlGa)As-GaAs solar cell is presented in this paper. The model assumed that the radiation-induced displacement defects form effective recombination centers which reduces the minority-carrier diffusion length and hence degrades the I/sub sc/, V/sub oc/, and eta/sub c/ of the solar cell. Excellent agreement was obtained between our calculated values and the measured I/sub sc/, V/sub oc/, and eta/sub c/ in the proton irradiated GaAs solar cells for proton energies varying from 100 keV to 10 MeV and fluences from 10/sup 10/ to 10/sup 12/ cm/sup -2/ under normal incidence condition.

Research Organization:
Department of Electrical Engineering, University of Florida, Gainesville, Florida 32611
OSTI ID:
6088397
Journal Information:
J. Appl. Phys.; (United States), Vol. 62:11
Country of Publication:
United States
Language:
English

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