A model for proton damage in Silicon and GaAs solar cells

Conference · Tue May 01 04:00:00 EDT 1984 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5151040

Yaung, J Y

There is a need to develop a generic model to predict proton damage in both GaAs cells and shallow-diffusion Si cells. The need comes from different areas such as validation of proton test data base, and trade-off studies between GaAs and advanced Silicon solar cells in low earth orbits. This paper describes an expansion of the simple short circuit current (I /SUB sc/ ) degradation model developed by John Wilson et al. This new model preserves the optical wavelength dependency in the photogeneration of minority carrier pairs, which is important to the solar cells with different spectral responses. By so doing, a generic model of solar cell proton damage was developed that predicts the experimental I /SUB sc/ degradations for both GaAs solar cells and Si solar cells closely and predicts the experimental spectral responses of protonirradiated cells reasonably well. The expansion of this model for V /SUB oc/ and P /SUB max/ is currently in progress.

• Research Organization: TRW Defense Systems Group, Redondo Beach, California
• OSTI ID: 5151040
• Report Number(s): CONF-840561-
• Conference Information: Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BARYONS
CRITICAL CURRENT
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CURRENTS
DAMAGE
DIRECT ENERGY CONVERTERS
ELECTRIC CURRENTS
ELECTRICAL FAULTS
ELECTRONIC EQUIPMENT
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
GALLIUM ARSENIDE SOLAR CELLS
HADRONS
INFORMATION VALIDATION
IRRADIATION
MATHEMATICAL MODELS
NUCLEONS
PHOTOCURRENTS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
POWER SUPPLIES
PROTONS
RADIATION EFFECTS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SPACECRAFT POWER SUPPLIES
TESTING
VALIDATION