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Electronic origin of the low-symmetry scanning tunneling microscopy image of the layered transition-metal halide [alpha]-RuCl[sub 3]

Journal Article · · Journal of Physical Chemistry; (United States)
DOI:https://doi.org/10.1021/j100120a031· OSTI ID:6235551
;  [1]; ;  [2]
  1. North Carolina State Univ., Raleigh (United States)
  2. Albert-Ludwigs Univ., Freiburg (Germany)
Scanning tunneling microscopy (STM) and atomic force microscopy (AFM) images of the layered transition-metal halide [alpha]-RuCl[sub 3] show striking differences. The AFM image show a hexagonal symmetry of the surface Cl layer, while the STM images at various tunneling conditions exhibit a strong deviation from the hexagonal symmetry. The STM image was examined by calculating the partial electron density [rho](r[sub 0],e[sub f]), and the AFM image by calculating the total electron density [rho](r[sub 0]), of a single RuCl[sub 3] layer. The patterns of the [rho](r[sub 0],e[sub f]) and [rho](r[sub 0]) plots are similar to those of the STM and AFM images, respectively. The STM images of [alpha]-RuCl[sub 3] for the surface-to-tip and tip-to-surface tunneling processes are similar, because [alpha]-RuCl[sub 3] is a magnetic semiconductor with d[sup 5] ions so that the partially filled levels lying at the top portion of the t[sub 2g]-block bands are involved in both tunneling processes. 19 refs., 6 figs., 1 tab.
DOE Contract Number:
FG05-86ER45259
OSTI ID:
6235551
Journal Information:
Journal of Physical Chemistry; (United States), Journal Name: Journal of Physical Chemistry; (United States) Vol. 97:18; ISSN JPCHAX; ISSN 0022-3654
Country of Publication:
United States
Language:
English