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U.S. Department of Energy
Office of Scientific and Technical Information

Preservation of surface features on semiconductor surfaces

Patent ·
OSTI ID:6235146
A semiconductor laser is described comprising a Group III-V compound semiconductor body having a major surface, p1 an optical grating on the major surface, a protective coating on the grating, the coating including a transition metal, a Group III-V compound semiconductor heterostructure formed on the coating, the heterostructure having the shape of a mesa and including a Group III-V compound semiconductor active layer, a current-blocking Group III-V compound semiconductor structure laterally adjacent the mesa and effective to direct the primary flow of current through the mesa during operation of the laser, and means forming electrical contact to the laser.
Assignee:
American Telephone and Telegraph Co., AT and T Bell Laboratories, Murray Hill, NJ
Patent Number(s):
US 4805178
OSTI ID:
6235146
Country of Publication:
United States
Language:
English