Charge characteristics of ion-implanted and annealed nitride/oxide/Si structures

Conference · Sat Jan 01 04:00:00 EST 1983

OSTI ID:6231450

Stein, H J

The ability to select specific ions and ion energy with ion implantation has been used in combination with capacitance-voltage measurements to probe relationships between defects and net positive charge in silicon nitride. Silicon nitride films deposited onto (100) n-type Si at 850/sup 0/C were implanted with /sup 14/N/sup +/ and /sup 11/B/sup +/. Capacitance-voltage measurements were made as a function of ion energy, thermal annealing, uv stimulated charge trapping and etchback to separate implanted ion and displacement damage effects on the implantation-induced net positive charge. The data show implantation induced writing which is removed by heating to 500/sup 0/C. Effects produced by implantation-induced defects are found to be ion independent but dependent upon ion energy which determines how close the displacement damage approaches the interface. The data for displacement damage effects are interpreted assuming hydrogen liberation from nitrogen bonds in the displacement damage profile and subsequent motion of hydrogen toward the SiN/Si interface to form Si-H bonds. A calculational model described by Hughes is invoked to explain dominance of the near interface region on measured net charge.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6231450
• Report Number(s): SAND-82-2788C; CONF-830508-18; ON: DE83012625
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ANNEALING
BORON
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEFECTS
DEPOSITION
ELECTRIC CHARGES
ELEMENTS
ETCHING
HEAT TREATMENTS
ION IMPLANTATION
NITRIDES
NITROGEN
NITROGEN COMPOUNDS
NONMETALS
PNICTIDES
SEMIMETALS
SILICON
SILICON COMPOUNDS
SILICON NITRIDES
SURFACE COATING
SURFACE FINISHING