Ion-implantation effects on the metal-semiconductor interfaces

Thesis/Dissertation · Fri Jan 01 04:00:00 EST 1988

OSTI ID:5961029

Yapsir, A S

Hydrogen ions have been used as the implanted species. The implantation is carried out on Al/n-Si Schottky contacts. Electrical characterizations, deep level transient spectroscopy measurements, and the {sup 15}N hydrogen profiling technique have been used to study the effects of ion implantation. It is demonstrated that the defect centers in the depletion region created by hydrogen implantation have more likely negative or possibly neutral signatures, rather than a positive signature as has been previously speculated. These negatively charged centers compensate for the positive donor resulting in a widening of the depletion region and reduction in the capacitance of the metal-semiconductor contacts. The tendency of hydrogen to passivate its own damage which results in the recovery of electronic transport across the metal-semiconductor junction upon low temperature heat treatment is also demonstrated. In connection with the behavior of hydrogen in silicon, in the second part of this thesis, detailed theoretical calculations on the hydrogen passivation of defects in silicon are carried out. A particular type of defect, namely, a substitutional sulfur in silicon, is chosen and is studied using the modified intermediate neglect of differential overlap (MINDO/3) molecular orbital method. It is found that the sulfur center can be passivated using one or two hydrogen atoms. Hydrogen ion implantation has also been carried out on Schottky contacts having a large difference in metal work function, Ti/p-Si and PtSi/p-Si structures. The aim of the study is to investigate the possibility of producing Fermi level pinning using ion implantation.

• Research Organization: Rensselaer Polytechnic Inst., Troy, NY (USA)
• OSTI ID: 5961029
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
656003 -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGED PARTICLES
DEFECTS
ELECTRIC CONTACTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELEMENTS
ENERGY LEVELS
EQUIPMENT
FERMI LEVEL
FUNCTIONS
HYDROGEN IONS
ION IMPLANTATION
IONS
JUNCTIONS
MAGNETIC FLUX
PASSIVATION
PHYSICAL PROPERTIES
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
WORK FUNCTIONS