Radiation-hardened optoelectronic components: detectors

Conference · Wed Jan 01 04:00:00 EST 1986

OSTI ID:6200379

Wiczer, J J

In this talk, we will survey recent research in the area of radiation hardened optical detectors. We have studied conventional silicon photodiode structures, special radiation hardened silicon photodiodes, and special double heterojunction AlGaAs/GaAs photodiodes in neutron, gamma, pulsed x-ray and charged particle environments. We will present results of our work and summarize other research in this area. Our studies have shown that detectors can be made to function acceptably after exposures to neutron fluences of 10/sup 15/ n/cm/sup 2/, total dose gamma exposures of 10/sup 8/ rad (Si), and flash x-ray environments of 10/sup 8/ rad/sec (Si). We will describe detector structures that can operate through these conditions, pre-rad and post-rad operational characteristics, and experimental conditions that produced these results. 23 refs., 10 figs., 1 tab.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6200379
• Report Number(s): SAND-85-1825C; CONF-860117-1; ON: DE86005891
• Country of Publication: United States
• Language: English

Related Subjects

440101 -- Radiation Instrumentation-- General Detectors or Monitors & Radiometric Instruments
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
DESIGN
ELECTROMAGNETIC RADIATION
ELECTRONS
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAMMA RADIATION
GERMANIUM
HADRONS
HARDENING
IONIZING RADIATIONS
LEPTONS
METALS
NEUTRONS
NUCLEONS
PHOTODETECTORS
PHOTODIODES
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTONS
RADIATION EFFECTS
RADIATION HARDENING
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SILICON
X RADIATION