EBIC (electron beam induced current) contrast of clean, decorated and deuterium passivated Si(Ge) epitaxial misfit dislocations
- North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering
- Sandia National Labs., Albuquerque, NM (USA)
The electrical activity of as-grown and intentionally decorated misfit dislocations in an epitaxial Si/Si(Ge) heterostructure was examined using the electron beam induced current (EBIC) technique in a scanning electron microscope. Misfit dislocations, which were not visible initially, were subsequently activated either by an unknown processing contaminant or a backside metallic impurity. Passivation of these contaminated dislocations was then studied using low energy deuterium ion implantation in a Kaufman ion source. EBIC results show that the recombination activity of the decorated misfit dislocations was dramatically reduced by the deuterium treatment. Although a front side passivation treatment was more effective than a backside treatment, a surface ion bombardment damage problem is still evident. 5 refs., 3 figs.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- Sponsoring Organization:
- USDOE; USDOE, Washington, DC (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6198202
- Report Number(s):
- SAND-91-0011C; CONF-910552-8; ON: DE91006967
- Resource Relation:
- Conference: 179. meeting of the Electrochemical Society, Washington, DC (USA), 5-10 May 1991
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GERMANIUM ALLOYS
DISLOCATIONS
SILICON
SILICON ALLOYS
CRYSTAL DEFECTS
DEUTERIUM
ELECTRICAL PROPERTIES
ION IMPLANTATION
PASSIVATION
SCANNING ELECTRON MICROSCOPY
ALLOYS
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELEMENTS
HYDROGEN ISOTOPES
ISOTOPES
LIGHT NUCLEI
LINE DEFECTS
MICROSCOPY
NUCLEI
ODD-ODD NUCLEI
PHYSICAL PROPERTIES
SEMIMETALS
STABLE ISOTOPES
360102* - Metals & Alloys- Structure & Phase Studies