Passivation of deep level states caused by misfit dislocations in InGaAs on patterned GaAs
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
- Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Deep level transient spectroscopy (DLTS) and cathodoluminescence (CL) were used to study the hydrogen passivation of misfit dislocations in In[sub 0.06]Ga[sub 0.94]As/GaAs heterostructures. The CL observations indicate that hydrogen plasma exposure passivates most, but not all, of the dark line defects existing in the specimen prior to hydrogenation. The concentration of deep level defect states that cannot be passivated is below the detection limit of the DLTS instrument (approximately 4[times]10[sup 12] cm[sup [minus]3]). We find the passivation is stable after anneals at temperatures as high as 600 [degree]C, indicating that hydrogen passivation of misfit dislocations is at least as stable as that of the isolated point defect studied previously with DLTS [W. C. Dautremont-Smith, J. C. Nabity, V. Swaminathan, M. Stavola, J. Chevalier, C. W. Tu, and S. J. Pearton, Appl. Phys. Lett. [bold 49] 1098 (1986)].
- DOE Contract Number:
- FG02-86ER45278
- OSTI ID:
- 6856451
- Journal Information:
- Applied Physics Letters; (United States), Vol. 62:12; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
GALLIUM ARSENIDES
ELECTRONIC STRUCTURE
INDIUM ARSENIDES
CATHODOLUMINESCENCE
DEEP LEVEL TRANSIENT SPECTROSCOPY
DISLOCATIONS
EPITAXY
FILMS
HYDROGENATION
PASSIVATION
TERNARY ALLOY SYSTEMS
ALLOY SYSTEMS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LINE DEFECTS
LUMINESCENCE
PNICTIDES
SPECTROSCOPY
360606* - Other Materials- Physical Properties- (1992-)