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Nucleation, propagation, electronic levels and elimination of misfit dislocations in III-V semiconductor interfaces. Final report

Technical Report ·
DOI:https://doi.org/10.2172/69183· OSTI ID:69183
This report discusses the following topics: strained layer defects; the structural and electronic characteristics of misfit dislocations; requirements for the growth of high quality, low defect density InGaAs strained epitaxial layers; the isolation and nucleation of misfit dislocations in strained epitaxial layers grown on patterned, ion-damaged GaAs; the effect of pattern substrate trench depth on misfit dislocation density; the thermal stability of lattice mismatched InGaAs grown on patterned GaAs; misfit dislocations in ZnSe strained epitaxial layers grown on patterned GaAs; and the measurement of deep level states caused by misfit dislocations in InGaAs/GaAs grown on patterned GaAs substrates.
Research Organization:
Cornell Univ., Ithaca, NY (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
FG02-86ER45278
OSTI ID:
69183
Report Number(s):
DOE/ER/45278--T2; ON: DE95011595
Country of Publication:
United States
Language:
English