[Structure and electronic properties of defects at nonlattice matched III-V semiconductor interfaces]. Progress report, 1989--90

Technical Report · Mon Dec 31 04:00:00 EST 1990

DOI:https://doi.org/10.2172/90071· OSTI ID:90071

Ast, D G

Research focused on control of misfit dislocations in strained epitaxial layers of GaAs through prepatterning of the substrate. Patterning and etching trenches into GaAs substrates before epitaxial growth results in nonplanar wafer surface, which makes device fabrication more difficult. Selective ion damaging the substrate prior to growth was investigated. The question of whether the overlayer must or must not be discontinuous was addressed. The third research direction was to extend results from molecular beam epitaxially grown material to organometallic chemical vapor deposition. Effort was increased to study the patterning processes and the damage it introduces into the substrate. The research program was initiated after the discovery that 500-eV dry etching in GaAs damages the substrate much deeper than the ion range.

• Research Organization: Cornell Univ., Ithaca, NY (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: FG02-86ER45278
• OSTI ID: 90071
• Report Number(s): DOE/ER/45278--4; ON: DE95013303
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
DAMAGE
DISLOCATIONS
ETCHING
FABRICATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
ION BEAMS
LAYERS
MOLECULAR BEAM EPITAXY
PROGRESS REPORT
SEMICONDUCTOR DEVICES
SUBSTRATES
XENON IONS