Dependence of misfit dislocation velocities upon growth technique and oxygen content in strained Ge sub x Si sub 1 minus x /Si(100) heterostructures

Journal Article · Mon Sep 23 00:00:00 EDT 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106292· OSTI ID:5197757

Hull, R; Bean, J C ^[1]; Noble, D; Hoyt, J; Gibbons, J F ^[2]

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1. AT T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey (USA)
2. Electrical Engineering Department, Stanford University, Stanford, California (USA)

Misfit dislocation velocities in strained Ge{sub {ital x}}Si{sub 1{minus}{ital x}}/Si(100) heterostructures are compared for layers grown by molecular beam epitaxy and limited reaction processing. We demonstrate that velocities are substantially lower in structures with oxygen concentrations {similar to}10{sup 20} cm{sup {minus}3} compared to layers with oxygen concentrations {similar to}10{sup 18} cm{sup {minus}3}. For layers with the lower oxygen concentration, the sample growth technique does not appear to be a significant factor affecting misfit dislocation velocity.

• OSTI ID: 5197757
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:13; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426000* -- Engineering-- Components
Electron Devices & Circuits-- (1990-)
CHEMICAL COMPOSITION
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
DISLOCATION PINNING
ELEMENTS
EPITAXY
EVALUATION
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
MOLECULAR BEAM EPITAXY
NONMETALS
OXYGEN
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS