Dependence of misfit dislocation velocities upon growth technique and oxygen content in strained Ge sub x Si sub 1 minus x /Si(100) heterostructures

Journal Article · Mon Sep 23 00:00:00 EDT 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106292· OSTI ID:5197757

Hull, R; Bean, J C ^[1]; Noble, D; Hoyt, J; Gibbons, J F ^[2]

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1. AT T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey (USA)
2. Electrical Engineering Department, Stanford University, Stanford, California (USA)

Misfit dislocation velocities in strained Ge{sub {ital x}}Si{sub 1{minus}{ital x}}/Si(100) heterostructures are compared for layers grown by molecular beam epitaxy and limited reaction processing. We demonstrate that velocities are substantially lower in structures with oxygen concentrations {similar to}10{sup 20} cm{sup {minus}3} compared to layers with oxygen concentrations {similar to}10{sup 18} cm{sup {minus}3}. For layers with the lower oxygen concentration, the sample growth technique does not appear to be a significant factor affecting misfit dislocation velocity.

• OSTI ID: 5197757
• Journal Information: Applied Physics Letters; (United States), Vol. 59:13; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
GERMANIUM SILICIDES
MOLECULAR BEAM EPITAXY
SILICON
CHEMICAL COMPOSITION
COMPARATIVE EVALUATIONS
CONCENTRATION RATIO
DISLOCATION PINNING
OXYGEN
ELEMENTS
EPITAXY
EVALUATION
GERMANIUM COMPOUNDS
NONMETALS
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
426000* - Engineering- Components
Electron Devices & Circuits- (1990-)