Interaction of cavities with misfit dislocations in SiGe/Si heterostructures
Conference
·
OSTI ID:369690
Consequences of the strong, short-range attractive interaction between cavities and misfit dislocations are examined in SiGe/Si heterostructures. When He is implanted at the SiGe/Si interface, either in situ during epitaxial growth or by post-growth treatment, cavities form and locate on the misfit dislocation cores. The misfit dislocations are no longer straight lines extending over several microns, but form a network with jogs and intersections at the cavities. The He-implanted cavity layer enhances thermal relaxation of the strained alloy and may increase the achievable degree of relaxation by lowering dislocation energies.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 369690
- Report Number(s):
- SAND--96-0879C; CONF-960994--2; ON: DE96015015
- Country of Publication:
- United States
- Language:
- English
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