Cavity{endash}dislocation interactions in Si{endash}Ge and implications for heterostructure relaxation

Journal Article · Sun Sep 01 00:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.116879· OSTI ID:383731

Follstaedt, D M; Myers, S M; Lee, S R ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1056 (United States)

Cavities formed in Si and Ge and their alloys by He implantation and annealing are demonstrated to have a strong short-range, attractive interaction with dislocations, with a binding energy calculated to be {approx_gt}100 eV when they overlap. Cavities can alter the relaxation of strained Si{sub 86}Ge{sub 14} layers on Si in several ways: cavities placed at the interface enhance relaxation rates by increased nucleation of misfit dislocations, reduce the number of dislocations protruding into the substrate, and may increase relaxation at thermodynamic equilibrium.

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 383731
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 69; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
BINDING ENERGY
CAVITIES
CRYSTAL DEFECTS
DISLOCATIONS
GERMANIUM SILICIDES
HETEROJUNCTIONS
HETEROSTRUCTURES
ION IMPLANTATION
RELAXATION
SILICON