Interaction of cavities and dislocations in semiconductors
Conference
·
OSTI ID:434343
TEM of He-implanted Si-Ge and InGaAs indicates an attractive interaction between cavities and dislocations. Calculation indicates that cavities are attracted to dislocations through surrounding strain fields, and strong binding (100s of eV) occurs when a cavity intersects the core. In a strained SiGe/Si heterostructure, He implantation enhances relaxation rates and cavities bound to misfit dislocations show evidence of increasing relaxation at equilibrium by lowering dislocation energies. The interaction is expected for all crystalline solids and gives insight into voids in GaN/sapphire and bubbles in He-implanted metals.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 434343
- Report Number(s):
- SAND--96-1714C; CONF-961202--11; ON: DE97001850
- Country of Publication:
- United States
- Language:
- English
Similar Records
Interaction of cavities with misfit dislocations in SiGe/Si heterostructures
Nanocavity effects on misfit accommodation in semiconductors
Cavity{endash}dislocation interactions in Si{endash}Ge and implications for heterostructure relaxation
Conference
·
Sun Sep 01 00:00:00 EDT 1996
·
OSTI ID:369690
Nanocavity effects on misfit accommodation in semiconductors
Technical Report
·
Mon Mar 31 23:00:00 EST 1997
·
OSTI ID:468586
Cavity{endash}dislocation interactions in Si{endash}Ge and implications for heterostructure relaxation
Journal Article
·
Sun Sep 01 00:00:00 EDT 1996
· Applied Physics Letters
·
OSTI ID:383731