Modified dislocation structures in Ge sub x Si sub 1 minus x double epilayers on (001) Si

Conference · Wed Nov 01 04:00:00 EST 1989

OSTI ID:7268518

Kvam, E. P.

Double epilayers of different compositions of Ge{sub x}Si{sub 1{minus}x} on (001) Si are observed to have dislocation contents which differ markedly from similar single epilayers. An initial epilayer, grown below its critical thickness, underwent substantial misfit dislocation introduction, while a second epilayer, grown at a composition where edge-type misfit dislocations are normally observed to dominate the morphology, contained mostly 60{degree} type dislocations. It is suggested that dislocation entry into the upper, high mismatch epilayer allows many dislocations to enter the buried, low mismatch epilayer, and that this in turn affects the dislocation morphology in the upper layer through strain relief. 7 refs., 3 figs.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• Sponsoring Organization: DOE/ER
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7268518
• Report Number(s): LBL-28193; CONF-891119--94; ON: DE90007078
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIMENSIONS
DISLOCATIONS
ELEMENTS
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
INTERFACES
LAYERS
LINE DEFECTS
MORPHOLOGY
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
THICKNESS