On the breakdown of layer-by-layer growth and the spontaneous nucleation of misfit dislocations in molecular-beam epitaxially grown GeSi/Si

Journal Article · Sat May 01 00:00:00 EDT 1993 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.586730· OSTI ID:147035

Perovic, D D ^[1]; Houghton, D C; Noeel, J P ^[2]

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1. Univ. of Toronto (Canada)
2. Inst. for Microstructural Sciences, Ottawa (Canada); and others

In this study, it is considered that the transition from ideal two-dimensional layer-by-layer growth to the initial stages of a three-dimensional growth morphology is a precursor to misfit dislocation injection in Ge{sub x}Si{sub 1-x}/Si heterostructures with x as low as 0.15. Transmission electron microscopy has been used to identify a new misfit dislocation nucleation mechanism, the {open_quotes}double half-loop{close_quotes} source. Furthermore, photoluminescence (PL) spectroscopy has also been used to study the effects of elastic strain-induced surface roughening at low misfits upon analyzing the change in PL behavior with increasing strained layer thickness. 11 refs., 4 figs.

• OSTI ID: 147035
• Report Number(s): CONF-9210296-; ISSN 0734-211X; TRN: 95:007540-0043
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 11, Issue 3; Conference: North American conference on molecular beam epitaxy, Ontario (Canada), 12-14 Oct 1992; Other Information: PBD: May-Jun 1993
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GERMANIUM SILICIDES
PHOTOLUMINESCENCE
SILICON
DISLOCATIONS
MORPHOLOGY
CRYSTAL GROWTH
THICKNESS
TRANSMISSION ELECTRON MICROSCOPY
RELAXATION
SUPERLATTICES