Buried-heterostructure lasers fabricated by in situ processing techniques

Journal Article · Mon Oct 29 04:00:00 EST 1990 · Applied Physics Letters; (USA)

DOI:https://doi.org/10.1063/1.104042· OSTI ID:6176699

Wang, Y L; Temkin, H; Harriott, L R; Logan, R A; Tanbun-Ek, T ^[1]

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1. AT T Bell Laboratories, Murray Hill, New Jersey 07974 (USA)

We describe, for the first time, the preparation of InGaAs/InP homojunction confined buried-heterostructure lasers by high vacuum processing techniques. Lithography and waveguide mesa etching were carried out using ultrathin native oxide masking, focused Ga ion beam writing, and free Cl{sub 2} etching. Base laser structures and overgrowth were carried out by atmospheric pressure metalorganic vapor phase epitaxy. The resulting lasers have low-threshold currents of {similar to}62 mA.

• OSTI ID: 6176699
• Journal Information: Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:18; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
426002* -- Engineering-- Lasers & Masers-- (1990-)
BEAMS
CURRENTS
ELECTRIC CURRENTS
EPITAXY
ETCHING
FABRICATION
ION BEAMS
LASERS
SAMPLE PREPARATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SOLID STATE LASERS
SURFACE FINISHING
THRESHOLD CURRENT
VAPOR PHASE EPITAXY
WAVEGUIDES