Reproducible liquid phase epitaxial growth of InGaAsP buried heterostructure lasers

Journal Article · Sun Nov 01 23:00:00 EST 1987 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.98691· OSTI ID:6131480

Logan, R A; Temkin, H; Blaha, J P; Strege, K E

Buried heterostructure lasers are formed using double heterostructure planar layers which are masked and etched to define laser mesas, with final regrowth by liquid phase epitaxy. Controlled melt etching of the exposed wafer surface is introduced just prior to the liquid phase epitaxial regrowth to form etched mesa buried heterostructure lasers. The melt etching uses an In-InP melt undersaturated by only --0.2 /sup 0/C and does not degrade the dimensional shape of the etched mesas. This process is shown to dramatically improve the growth reproducibility and results in excellent device characteristics. This closely controlled removal of the mesa sidewall just prior to epitaxy is also expected to contribute to increased laser reliability.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6131480
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 51:18; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
DESIGN
EPITAXY
ETCHING
FABRICATION
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
LASERS
LIQUID PHASE EPITAXY
MASKING
MELTING
PERFORMANCE
PHASE TRANSFORMATIONS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
SURFACE FINISHING