Influence of )111) regrowth sidewall interfaces on the performance of 1. 54. mu. m InGaAsP/InP etched-mesa-buried-heterostructure lasers
The quality of )111) sidewall interfaces formed during liquid phase epitaxial regrowth around an etched mesa in an etched-mesa-buried-heterostructure laser device has been studied using cross-sectional transmission electron microscopy, cross-sectional transmission cathodoluminescence, and energy dispersive x-ray analysis. The results are correlated with the optical performance and electrical characteristics of the device before the aging test. It is found that the interfacial lattice imperfection will affect the device performance only when the defects are nonradiative recombination centers or they constitute a leakage path for the current. The possible causes for a defective interface will be discussed.
- Research Organization:
- AT and T Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6875779
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 61:7; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
AGING
ARSENIC COMPOUNDS
ARSENIDES
CATHODOLUMINESCENCE
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CURRENTS
ELECTRIC CURRENTS
ELECTRON MICROSCOPY
EPITAXY
ETCHING
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INTERFACES
JUNCTIONS
LASERS
LEAKAGE CURRENT
LIQUID PHASE EPITAXY
LUMINESCENCE
MICROSCOPY
PERFORMANCE
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
RECOMBINATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SURFACE FINISHING
TRANSMISSION ELECTRON MICROSCOPY