New lateral selective-area growth by liquid-phase epitaxy: The formation of a lateral double-barrier buried-heterostructure laser
Journal Article
·
· Appl. Phys. Lett.; (United States)
We report a new lateral selective-area growth by liquid-phase epitaxy with the preparation of a new buried-heterostructure laser, the lateral double-barrier buried-heterostructure (DBBH) laser, as an illustrative example. The DBBH laser so prepared operated in a stable clean fundamental mode with reduced optical scattering losses due to sidewall roughness of the etched mesa. Pulsed operation was achieved at temperatures as high as 280 /sup 0/C. This new selective-area growth can also be used to form guided wave integrated microlens systems.
- Research Organization:
- Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 5610441
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 40:11; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
CRYSTAL GROWTH
DATA
ELECTRONIC CIRCUITS
ENERGY LOSSES
EPITAXY
ETCHING
EXPERIMENTAL DATA
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
INTEGRATED CIRCUITS
JUNCTIONS
LASERS
LIQUIDS
LOSSES
MEDIUM TEMPERATURE
MICROELECTRONIC CIRCUITS
NUMERICAL DATA
OSCILLATION MODES
PNICTIDES
POTENTIALS
PULSES
ROUGHNESS
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STABILITY
SURFACE FINISHING
SURFACE PROPERTIES
360601 -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
CONFIGURATION
CRYSTAL GROWTH
DATA
ELECTRONIC CIRCUITS
ENERGY LOSSES
EPITAXY
ETCHING
EXPERIMENTAL DATA
FLUIDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HETEROJUNCTIONS
INFORMATION
INTEGRATED CIRCUITS
JUNCTIONS
LASERS
LIQUIDS
LOSSES
MEDIUM TEMPERATURE
MICROELECTRONIC CIRCUITS
NUMERICAL DATA
OSCILLATION MODES
PNICTIDES
POTENTIALS
PULSES
ROUGHNESS
SCATTERING
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
STABILITY
SURFACE FINISHING
SURFACE PROPERTIES