Materials processing diamond: etching, doping by ion implantation, and contact formation. Annual technical report, 1 October 1987-30 September 1988
Natural diamond was doped with B or P ion implantation at liquid nitrogen temperature. Ions of C were implanted prior to the dopant implants, in order to enhance the vacancy concentration in the diamond, thereby increasing the likelihood that the dopant atoms would occupy substitutional lattice sites, and thus be electrically active. Various post-implantation annealing methods were employed to reduce the residual damage in the crystals. Type IIa diamond crystals were implanted with boron ions with or without prior carbon-ion implantation. The samples were kept at liquid nitrogen temperature during both implantation steps. A strong near-edge optical absorption band appeared after implantation, and partially recovered during annealing at 800 C. For the highest B-implantation fluence, optical absorption peaks at 2800 to 3000 reciprocal centimeters were observed that were in the same vicinity as the absorption peaks attributed to substitutional boron atoms in natural p-type diamond.
- Research Organization:
- North Carolina Univ., Chapel Hill (USA). Dept. of Physics and Astronomy
- OSTI ID:
- 6162046
- Report Number(s):
- AD-A-202380/2/XAB
- Country of Publication:
- United States
- Language:
- English
Similar Records
Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond
Materials processing of diamond: Etching, doping by ion implantation, and contact formation. Annual technical report, 1 October 1988-30 September 1989
Related Subjects
360605* -- Materials-- Radiation Effects
ABSORPTION
ANNEALING
ATOMS
BORON
CARBON
CHARGED PARTICLES
CRYSTAL DOPING
DAMAGE
DIAMONDS
DOCUMENT TYPES
ELECTRICAL PROPERTIES
ELEMENTAL MINERALS
ELEMENTS
HEAT TREATMENTS
ION IMPLANTATION
IONS
MINERALS
NONMETALS
OPTICAL PROPERTIES
PATENTS
PHYSICAL PROPERTIES
PROGRESS REPORT
SEMIMETALS