Characterization of single-crystal diamond grown from the vapor phase on substrates of natural diamond
- ITC UralAlmazInvest (Russian Federation)
- Russian Academy of Sciences, Institute of Applied Physics (Russian Federation)
- FSUE Istok (Russian Federation)
The results of studies of single-crystal diamond layers with orientation (100) grown on substrates of IIa-type natural diamond by chemical-vapor deposition and of semiconductor diamond obtained subsequently by doping by implantation of boron ions are reported. Optimal conditions of postimplantation annealing of diamond that provide the hole mobility of 1150 cm{sup 2} V{sup -1} s{sup -1} (the highest mobility obtained so far for semiconductor diamond after ion implantation) are given.
- OSTI ID:
- 22004845
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 45; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure
Materials processing diamond: etching, doping by ion implantation, and contact formation. Annual technical report, 1 October 1987-30 September 1988
Journal Article
·
Wed Mar 16 00:00:00 EDT 2022
· Applied Physics Letters
·
OSTI ID:1979043
Materials processing diamond: etching, doping by ion implantation, and contact formation. Annual technical report, 1 October 1987-30 September 1988
Technical Report
·
Fri Sep 30 00:00:00 EDT 1988
·
OSTI ID:6162046