A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure

Woo, Kelly; Malakoutian, Mohamadali; Reeves, Benjamin A.; Chowdhury, Srabanti

doi:10.1063/5.0083710

A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure

Journal Article · Wed Mar 16 00:00:00 EDT 2022 · Applied Physics Letters

DOI:https://doi.org/10.1063/5.0083710· OSTI ID:1979043

^[1]; ^[2]; Reeves, Benjamin A. ^[2]; ^[2]

Stanford University, CA (United States); Stanford Univ., Stanford, CA (United States)
Stanford University, CA (United States)

Diamond is an ultrawide-bandgap semiconductor suitable for high power devices that require high current carrying capacity, high blocking voltages, and smaller form factors. We investigated various diamond structures for extrinsic photoconductive semiconductor switches, including an insulating high-pressure high-temperature type Ib (highly nitrogen-doped) substrate, a chemical vapor deposited (CVD) type IIa (unintentionally doped) substrate, a CVD grown semiconducting boron-doped epilayer on a type IIa substrate, and boron-implanted type Ib and IIa substrates. Using these samples, we fabricated and characterized planar interdigitated photoconductive switches with 30 μm, electrode gaps. 532 and 1064 nm Nd:YAG laser pulses with energies up to 3.5 mJ/pulse were used to trigger the switches. Photoresponses were measured at bias voltages ranging from 10 to 100 V, corresponding to electric fields of 3.3–33 kV/cm. In this field range, the type Ib device exhibited the highest average on/off-state current ratio, on the order of 10¹¹, when triggered with 0.8 mJ/pulse, 532 nm laser pulses. However, only the CVD grown boron-doped epilayer and boron implanted IIa devices showed decent sensitivity to 1064 nm.

View Accepted Manuscript (DOE)

Research Organization:: Arizona State University, Tempe, AZ (United States); Stanford University, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); Stanford Precourt Institute

Grant/Contract Number:: SC0021230

OSTI ID:: 1979043

Alternate ID(s):: OSTI ID: 1855511

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 120; ISSN 0003-6951

Publisher:: American Institute of Physics (AIP)Copyright Statement

Country of Publication:: United States

Language:: English

References (16)

A diamond opto-electronic switch Ho, P. -T.; Lee, C. H.; Stephenson, J. C. Optics Communications, Vol. 46, Issue 3-4 https://doi.org/10.1016/0030-4018(83)90277-8	journal	July 1983
Boron doped diamond films: Electrical and optical characterization and the effect of compensating nitrogen Locher, R.; Wagner, J.; Fuchs, F. Materials Science and Engineering: B, Vol. 29, Issue 1-3 https://doi.org/10.1016/0921-5107(94)04045-6	journal	January 1995
Optical detection of defect centers in CVD diamond Iakoubovskii, K.; Adriaenssens, G. J. Diamond and Related Materials, Vol. 9, Issue 7 https://doi.org/10.1016/S0925-9635(00)00248-X	journal	July 2000
Photoconductivity of undoped, nitrogen- and boron-doped CVD- and synthetic diamond Rohrer, E.; Nebel, C. E.; Stutzmann, M. Diamond and Related Materials, Vol. 7, Issue 6 https://doi.org/10.1016/S0925-9635(97)00318-X	journal	June 1998
Diamond as an electronic material Wort, Chris J. H.; Balmer, Richard S. Materials Today, Vol. 11, Issue 1-2 https://doi.org/10.1016/S1369-7021(07)70349-8	journal	January 2008
Extrinsic photoconductivity in chemical vapor deposition diamond Jeng, David G.; Tuan, H. S.; Salat, Robert F. Applied Physics Letters, Vol. 58, Issue 12 https://doi.org/10.1063/1.104333	journal	March 1991
Compensation effects in nitrogen‐doped diamond thin films Mort, J.; Machonkin, M. A.; Okumura, K. Applied Physics Letters, Vol. 59, Issue 24 https://doi.org/10.1063/1.105767	journal	December 1991
4H–SiC photoconductive switching devices for use in high-power applications Doǧan, S.; Teke, A.; Huang, D. Applied Physics Letters, Vol. 82, Issue 18 https://doi.org/10.1063/1.1571667	journal	May 2003
Generation and transport of photoexcited electrons in single-crystal diamond Heremans, F. J.; Fuchs, G. D.; Wang, C. F. Applied Physics Letters, Vol. 94, Issue 15 https://doi.org/10.1063/1.3120225	journal	April 2009
High voltage optoelectronic switching in diamond Bharadwaj, P. K.; Code, R. F.; van Driel, H. M. Applied Physics Letters, Vol. 43, Issue 2 https://doi.org/10.1063/1.94288	journal	July 1983
Photoconductive switching in diamond under high bias field Feng, S.; Ho, P. -T.; Goldhar, J. IEEE Transactions on Electron Devices, Vol. 37, Issue 12 https://doi.org/10.1109/16.64526	journal	December 1990
Photoconductive Switch with High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond Hall, David L.; Voss, Lars F.; Grivickas, Paulius IEEE Electron Device Letters https://doi.org/10.1109/LED.2020.2999821	journal	January 2020
Design and Evaluation of a Compact Silicon Carbide Photoconductive Semiconductor Switch James, Colt; Hettler, Cameron; Dickens, James IEEE Transactions on Electron Devices, Vol. 58, Issue 2 https://doi.org/10.1109/TED.2010.2089689	journal	February 2011
High voltage bulk GaN-based photoconductive switches for pulsed power applications Leach, J. H.; Metzger, R.; Preble, E. A. SPIE OPTO, SPIE Proceedings https://doi.org/10.1117/12.2005548	conference	March 2013
Dependence of conduction characteristics on compensation type and lattice structure of SiC photoconductive semiconductor switches Feng, Zhuoyun; Xiao, Longfei; Luan, Chongbian Applied Optics, Vol. 60, Issue 11 https://doi.org/10.1364/AO.420840	journal	January 2021
Wide Bandgap Extrinsic Photoconductive Switches Sullivan, James https://doi.org/10.2172/1088462	report	July 2013

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71 CLASSICAL AND QUANTUM MECHANICS
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diamond
doping
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electrical properties and parameters
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photoconductive materials
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semiconductor switch

A study on sub-bandgap photoexcitation in nitrogen- and boron-doped diamond with interdigitated device structure

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