Photoluminescence study of the damage distribution in proton-bombarded (Al,Ga)As-GaAs-(Al,Ga)As double heterostructure
The damage distribution in proton-bombarded (Al,Ga)As-GaAs-(Al,Ga)As double heterostructure was studied via changes in the photoluminescence intensity of the GaAs layer as a function of proton energy in the range 50--300 keV for a constant fluence of 3 x 10/sup 15/ cm/sup -2/. It was found that the intensity decreased monotonically with proton energy greater than 175 keV and at an implant energy of 225 keV it degraded by a factor of 4 even though the projected range of the protons ended approx.0.7 ..mu..m above the layer. The luminescence changes at low implant energies are attributed to the damage created by those protons in the tail of the distribution even though their number has decreased by two to three orders of magnitude from the peak value. In light of our results the implications of using protons to form the current-confining stripe in (Al,Ga)As lasers are discussed.
- Research Organization:
- ATandT Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6140768
- Journal Information:
- J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 56:10; ISSN JAPIA
- Country of Publication:
- United States
- Language:
- English
Similar Records
Ion damage production in GaAs/Al{sub 0.6}Ga{sub 0.4}As heterostructures
Depth dependence of ion implantation damage in Al{sub {ital x}}Ga{sub 1{minus}{ital x}}As/GaAs heterostructures
Related Subjects
360605* -- Materials-- Radiation Effects
ALUMINIUM ARSENIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BARYONS
ELEMENTARY PARTICLES
ENERGY RANGE
FERMIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HADRONS
HETEROJUNCTIONS
JUNCTIONS
KEV RANGE
KEV RANGE 10-100
KEV RANGE 100-1000
LASERS
LUMINESCENCE
NUCLEONS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
PNICTIDES
PROTONS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
ULTRALOW TEMPERATURE