Studies of chemical vapor deposition of amorphous silicon and transparent electrodes for solar cells. II. Technical status report, 1 January 1984-31 March 1984

Technical Report · Mon Oct 01 04:00:00 EDT 1984

OSTI ID:6133355

Gordon, R; Kurtz, S; Proscia, J; Gustin, K; Chapple-Sokol, J; Strickler, D

This paper is the second in a series reporting research on chemical vapor deposition (CVD) of amorphous silicon and transparent electrodes for solar cells. It expands on a description of a surface photovoltage (SPV) apparatus and method for measuring minority carrier diffusion lengths in a-SiH films on both crystal silicon and stainless steel cell substrates. Films of titanium nitride were also examined on a variety of substrates, as were silica and alumina films.

• Research Organization: Harvard Univ., Cambridge, MA (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6133355
• Report Number(s): SERI/STR-211-2448; ON: DE85002916
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM COMPOUNDS
CHALCOGENIDES
CHEMICAL COATING
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
MINERALS
NITRIDES
NITROGEN COMPOUNDS
OXIDE MINERALS
OXIDES
OXYGEN COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC