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Studies of chemical vapor deposition of amorphous silicon and transparent electrodes for solar cells. Final report, 1 April 1983-30 September 1984

Technical Report ·
DOI:https://doi.org/10.2172/5330500· OSTI ID:5330500
This report presents results of research on atmospheric-pressure chemical vapor deposition (APCVD), a promising alternative deposition technique for preparing hydrogenated amorphous silicon for use in thin-film solar cells and for preparing transparent conductive electrode layers. The lack of ion bombardment, the observed high deposition rates, and the overall simplicity of the technology could mean a sizable cost reduction in the large-scale manufacturing of amorphous silicon solar cells. Solar cells with at least 8% efficiency should be possible with APCVD amorphous silicon. Titanium nitride films produced by APCVD were shown to provide low-resistance electrical contact to tin oxide and also to highly doped silicon (both p and n-type, crystalline and amorphous).
Research Organization:
Harvard Univ., Cambridge, MA (USA). Dept. of Chemistry
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5330500
Report Number(s):
SERI/STR-211-2695; ON: DE85016848
Country of Publication:
United States
Language:
English