Studies of chemical vapor deposition of amorphous silicon and transparent electrodes for Solar Cells III. Status report, 1 April-30 June 1984

Technical Report · Mon Oct 01 04:00:00 EDT 1984

OSTI ID:6415812

Gordon, R G; Kurtz, S; Proscia, J; Gustin, K; Chapple-Sokol, J; Strickler, D

This is the third progress report on research studies of chemical vapor deposition (CVD) of amorphous silicon and transparent electrodes for solar cells. An apparatus for measuring minority carrier diffusion lengths, a surface photovoltage system, was calibrated and found to obtain reproducible results. Surface photovoltages of several samples of CVD a-Si were measured, and diffusion lengths ranged from 0.1 to 0.4 micron. The highest diffusion length values were found in samples grown in the early part of the gas flow, implying that either a higher quality film is formed from SiH/sub 2/ precursors than from others or that a small amount of boron doping early in the process produces a better film.

• Research Organization: Harvard Univ., Cambridge, MA (USA). Dept. of Chemistry
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6415812
• Report Number(s): SERI/STR-211-2513; ON: DE85000523
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
BORON
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DIFFUSION LENGTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
ELECTRICAL EQUIPMENT
ELEMENTS
EQUIPMENT
LENGTH
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING