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Permanent damage effects in Si and AlGaAs/GaAs photodiodes

Journal Article · · IEEE Trans. Nucl. Sci.; (United States)
The authors report here on a study of permanent damage effects in photodiodes due to total dose exposures of 10/sup 8/ rad (Si) ionizing-radiation from a Co/sup 60/ source. Specifically, the authors compare the degradation of optical quantum efficiency and increases in photodiode leakage current in Si PIN structures with specially designed and fabricated, double heterostructure AlGaAs/GaAs photodiodes. Results indicate some degradation in quantum efficiency (20-30%) for both types of devices. Leakage currents were found to increase significantly after 10/sup 8/ rad in the Si PIN structures but only increase slightly in the AlGaAs/GaAs structures.
Research Organization:
Sandia Nat'l Labs., Albuquerque, NM 87185
OSTI ID:
6132220
Journal Information:
IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. 25:6; ISSN IETNA
Country of Publication:
United States
Language:
English