Temperature behavior of optical absorption in InGaAsP lasers
We have investigated the temperature dependence of the optical absorption in InGaAsP lasers emitting at 1.57 ..mu..m by measuring the resonant frequency as a function of output power at various temperatures. The results obtained using this technique are not influenced by leakage currents which can reduce the measured external differential quantum efficiency in some device structures. Our results show that the optical absorption does not vary significantly with increasing temperature which suggests that the threshold carrier density in 1.57-..mu..m InGaAsP lasers is weakly temperature dependent. The latter is consistent with our recent measurement of threshold current using short electrical pulses where T/sub 0/approx.170 K was observed. Thus, the strong temperature dependence of threshold current of InGaAsP lasers is primarily due to the temperature dependence of the carrier lifetime at threshold. The shorter carrier lifetime (i.e., increased carrier loss) at high temperature can be due to Auger recombination.
- Research Organization:
- AT and T Bell Laboratories, Murray Hill, New Jersey 07974
- OSTI ID:
- 6116571
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:10; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CARRIER LIFETIME
CURRENTS
DATA
ELECTRIC CURRENTS
ELECTROMAGNETIC RADIATION
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
INFRARED RADIATION
LASERS
LIFETIME
LIGHT TRANSMISSION
NUMERICAL DATA
OPACITY
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
TEMPERATURE EFFECTS
THRESHOLD CURRENT