CW InGaAsP/InP injection lasers with very low threshold current density at room temperature

Journal Article · Sat Jun 01 00:00:00 EDT 1985 · IEEE J. Quant. Electron.; (United States)

DOI:https://doi.org/10.1109/JQE.1985.1072714· OSTI ID:5952700

Dolginov, L M; Drakin, A E; Elissev, P G; Shevchenko, E G; Sverdlov, B N

Laser diodes of InGaAsP/InP are studied with a modified double heterostructure containing an ultrathin (<0.1 ..mu..m) active layer and adjacent guiding layers transparent for laser emission (''three-layer waveguide'' structure). Due to improved optical confinement in these structures, the laser action at room temperature has been observed with a threshold current density as low as about0.5 kA/cm/sup 2/. CW operation in broad area diodes has been obtained. The dependence of threshold on the thickness of active layer is discussed in terms of optical confinement and nonradiative loss due to carrier leakage and Auger recombination. It is concluded that the leakage is the probable origin of the threshold increase at smallest thickness of the active layer rather than light diffraction.

• Research Organization: State Research, Institute of Rare Metals, Moscow
• OSTI ID: 5952700
• Journal Information: IEEE J. Quant. Electron.; (United States), Journal Name: IEEE J. Quant. Electron.; (United States) Vol. GE-21:6; ISSN IEJQA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CURRENT DENSITY
CURRENTS
ELECTRIC CURRENTS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
JUNCTIONS
LASERS
OPTICAL MODES
OSCILLATION MODES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR LASERS
SUBSTRATES
TEMPERATURE EFFECTS
THRESHOLD CURRENT