Temperature behavior of optical absorption in InGaAsP lasers

Journal Article · Sat Dec 15 04:00:00 EST 1984 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.95119· OSTI ID:6253900

Shen, T M; Dutta, N K

The temperature dependence of the optical absorption in InGaAsP laser emitting at 1.3 ..mu..m is studied by measuring the relaxation frequency as a function of output power at various temperatures. Our results show that the optical absorption does not vary significantly with increasing temperature. This suggests that the threshold carrier density in InGaAsP lasers is weakly temperature dependent compared to the threshold current density. Thus, the strong temperature dependence of threshold current in 1.3-..mu..m InGaAsP lasers is primarily due to the temperature dependence of the carrier lifetime at threshold. The shorter carrier lifetime (i.e., increased carrier loss) at high temperature can be due to Auger recombination.

• Research Organization: ATandT Bell Laboratories, Murray Hill, New Jersey 07974
• OSTI ID: 6253900
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 45:12; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CURRENTS
DATA
ELECTRIC CURRENTS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM PHOSPHIDES
INDIUM ARSENIDES
INDIUM COMPOUNDS
INDIUM PHOSPHIDES
INFORMATION
LASERS
NUMERICAL DATA
OPACITY
OPTICAL PROPERTIES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES
RELAXATION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
TEMPERATURE DEPENDENCE
THRESHOLD CURRENT