Growth of (110)-oriented CeO sub 2 layers on (100) silicon substrates

Journal Article · Mon Dec 30 04:00:00 EST 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.105646· OSTI ID:6112019

Inoue, T; Ohsuna, T ^[1]; Luo, L; Wu, X D; Maggiore, C J ^[2]; Yamamoto, Y; Sakurai, Y; Chang, J H ^[3]

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1. Department of Electronic Engineering, College of Science and Engineering, Iwaki Meisei University, 5-5-1 Iino-Chuodai, Iwaki, Fukushima 970 (Japan)
2. Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
3. Research Center of Ion Beam Technology, Hosei University, 3-7-2 Kajino-cho, Koganei, Tokyo 184 (Japan)

CeO{sub 2} layers epitaxially grown on (100) silicon substrates by electron-beam evaporation were investigated and proved to have (110) orientation. X-ray diffraction measurements showed the CeO{sub 2} layers consist of more than 98% volume fraction of the (110) component. Cross-sectional high-resolution transmission electron microscopy and selected-area electron diffraction clearly verified the above configuration of crystallographic orientations and that the {l angle}100{r angle} direction in the CeO{sub 2}(110) plane is parallel with the {l angle}110{r angle} direction in the Si(100) plane. The cross-sectional lattice image clarified the existence of a {similar to}60-A-thick intermediate amorphous layer between the CeO{sub 2} layer and the silicon substrate. Moreover, the high density of defects such as dislocations and low-angle boundaries that exist in the vicinity of the interface agree well with Rutherford backscattering and channeling measurements.

• OSTI ID: 6112019
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:27; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360201* -- Ceramics
Cermets
& Refractories-- Preparation & Fabrication
CERIUM COMPOUNDS
CERIUM OXIDES
CHALCOGENIDES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
DISLOCATIONS
ELEMENTS
EPITAXY
FILMS
INTERFACES
LINE DEFECTS
OXIDES
OXYGEN COMPOUNDS
RARE EARTH COMPOUNDS
SCATTERING
SEMIMETALS
SILICON
THIN FILMS
X-RAY DIFFRACTION